Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

Erman Azwan Yahya, Ramani Kannan, Lini Lee


High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.


Harsh environment; Heavy ion; Power MOSFET; Sentaurus synopsys; Single event effects

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Bulletin of Electrical Engineering and Informatics (BEEI)
ISSN: 2089-3191, e-ISSN: 2302-9285
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).