On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications
Abderrezak Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J-M. Portal, E. Bergeret, R. Bouchakour
Abstract
A new MOS device called D ual-C ontrol G ate F loating G ate T ransistor (DCG-FGT ) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS N on V olatile M emory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper.
Keywords
ring VCO; Dual control gate floating gate transistor; good VCO linearity
DOI:
https://doi.org/10.11591/eei.v2i3.206
Refbacks
There are currently no refbacks.
<div class="statcounter"><a title="hit counter" href="http://statcounter.com/free-hit-counter/" target="_blank"><img class="statcounter" src="http://c.statcounter.com/10241695/0/5a758c6a/0/" alt="hit counter"></a></div>
Bulletin of EEI Stats
Bulletin of Electrical Engineering and Informatics (BEEI) ISSN: 2089-3191, e-ISSN: 2302-9285 This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU) .