Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends

Kavindra Kandpal, Navneet Gupta

Abstract


This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters.  Effect of high –k dielectrics, grain boundaries, trap densities, and threshold voltage shift on the performance of ZnO TFT is also explained.

Keywords


ZnO TFT; a – Si TFT; poly – Si TFT; threshold voltage shift

Full Text:

PDF


DOI: https://doi.org/10.11591/eei.v5i2.530

Refbacks

  • There are currently no refbacks.




Bulletin of EEI Statistics

Bulletin of Electrical Engineering and Informatics (BEEI)
ISSN: 2089-3191 , e-ISSN: 2302-9285
This journal is published by the Institute of Advanced Engineering and Science (IAES) .